XYCOM XVME-100 memory module

XYCOM XVME-100 memory module

Product Overview and Core Positioning

Product definition: XYCOM XVME-100 is a single height (3U) VMEbus compatible memory expansion module for industrial control systems, designed to provide RAM, EPROM, mask ROM, or EEPROM storage expansion for VMEbus architecture systems, supporting flexible configuration and data backup.

Core values:

High compatibility: fully compliant with the VMEbus C1 standard, seamlessly integrated into the VMEbus system;

Flexible expansion: Dual storage group design, supporting multiple capacities and types of storage chips, adapting to different scene requirements;

Data security: onboard battery backup and undervoltage protection circuit to prevent data loss caused by power failure;

Independent configuration: Independent settings of storage group address, chip speed, backup power, and other parameters are achieved through jumper wires.

Applicable scenarios: VMEbus architecture devices that require reliable memory expansion, such as industrial automation control, military electronic equipment, embedded systems, etc.

Key specification parameters

(1) Core Performance Parameter Table

Specific specifications of the project

Storage capacity RAM/EPROM/Mask ROM: Maximum 1MB; EEPROM: Maximum 256KB

Design 2 storage groups (Bank1/Bank2), each with 4 32 pin JEDEC slots, supporting independent configuration

Compatible chip specifications and capacities: 8K × 8, 16K × 8, 32K × 8, 64K × 8, 128K × 8 (EEPROM limited to 32K × 8 and below);

Speed: 100ns, 150ns, 200ns, 250ns

Power requirements: Working power supply:+5V DC (typical 900mA, maximum 1A);

Backup power supply: onboard battery (1.4Ah, typical lifespan of 6 years) or+5V STDBY

Bus compatible with VMEbus C1 standard, A24 address space, DTB slave device

Physical specification 3U Form Factor (single height), size meets VMEbus standard

(2) Environmental and Reliability Parameter Table

Specific specifications of environmental category

Working temperature: 0 ° C~65 ° C (32 ° F~149 ° F)

Storage temperature -40 ° C~85 ° C (-40 ° F~158 ° F)

Humidity 5%~95% RH, non condensing (anti-static protection is required for extremely low humidity)

Altitude work: 0~3048m (10000ft); Storage: 0~15240m (50000ft)

Vibration (working) 5~2000Hz, peak acceleration 10g, peak to peak displacement 0.025mm (maximum)

Impact (working) 30g peak acceleration, 11ms duration

Core functions and design highlights

(1) Storage and configuration functions

Dual storage group independent configuration: Bank1 and Bank2 can set VME address, chip size, address modifier decoding, chip speed, and backup power type separately through jumper wires, supporting mixed use of chips of different specifications;

Multi type storage support: compatible with RAM, EPROM, mask ROM, EEPROM four storage types, EEPROM needs to support fast write/polling technology and TTL logic level;

Flexible allocation of address space: Set the base address through J14-J24 (Bank1) and J16/J26-J33 (Bank2) jumpers, and the address space occupied by the storage group is 4 times the chip capacity, which needs to be aligned to the 4 times capacity boundary.

(2) Data protection mechanism

Undervoltage protection: Equipped with a built-in power monitor, the storage chip is automatically disabled when the+5V voltage is lower than 4.75V to prevent data writing errors. The SYSRESET * drive signal can be optionally enabled;

Dual options for backup power: supports onboard battery backup (compatible with low-power RAM chips) or VMEbus+5V STDBY backup, switched via J34/J35 jumper;

Data anti write design: automatically cuts off the write path of the storage chip in case of power failure, combined with battery backup to ensure long-term storage of RAM data.

(3) Bus and interface characteristics

VMEbus signal compatibility: supports IACKIN */ACKOUT * daisy chain and BUS GRANT signal direct connection, complying with the address, data, and control signal definitions of VMEbus C1 standard;

P1 connector interface: 3-row pin design, including address bus (A01-A23), data bus (D00-D15), control signals (AS *, DS0 */DS1 *, DTACK *, etc.), and power pins;

Status indication: Each storage group is equipped with a green LED that lights up instantly when accessed, providing visual feedback on the working status.

Installation and configuration process

(1) Key items for jumper configuration

Configure Category Jumper Position Core Function

Address/chip size Bank1: J14/J17-J24/J50-J52;

Bank2: J16/J26-J33/J47-J49 Set VME base address (A15-A23) and chip capacity (8K × 8~128K × 8)

Address modifier decoding Bank1: J10-J13;

Bank2: J9/J12/J15 Configure privileged access (super user only/all users), data/program space access permissions

Chip speed selection Bank1: J6-J7;

Bank 2: J4-J5 matching storage chip speed (100ns/150ns/200ns/250ns)

Definition of memory chip pins Bank1: J40-J46;

Bank2: Pin definitions for adapting J2/J3/J25/J36-J39 to different types of storage chips (such as EPROM/RAM pin differences)

Select J34-J35 for backup power and switch between battery backup/+5V STDBY backup/no backup mode

(2) Installation steps

Chip installation: In the power-off state, configure the corresponding jumper according to the storage type, align the storage chip with the slot gap direction, evenly insert it into the 32 pin slot with force, and ensure that the pins are fully in contact;

Rack deployment: Align the module with the VMEbus rack rail, slowly push it in until the connector is fully engaged, and secure the front panel with screws. Each module occupies one 3U slot;

Optional 6U panel installation: If you need to adapt to a 6U rack, you can replace the XVME-945 6U front panel kit and transfer the handle and identification plate according to the manual steps;

Calibrate power monitor: It has been calibrated at the factory. If recalibration is required, adjust the POT R3 potentiometer with a 4.75V reference power supply to ensure accurate triggering threshold for undervoltage protection.

Safety and usage precautions

Battery safety: Short circuit, charging, reverse connection, welding or heating of batteries are prohibited. Waste should be treated as industrial waste to avoid high temperature and contact with metal surfaces;

Static electricity protection: When operating modules and storage chips, it is necessary to release human static electricity, especially CMOS RAM chips are sensitive to static electricity;

Installation taboos: It is forbidden to plug and unplug modules with power on. When inserting, avoid applying too much force to bend the pins and ensure that the module is aligned with the rack rails;

Special requirements for EEPROM: EEPROM must support fast write/polling technology and must use TTL logic level, otherwise it may cause abnormal operation.