TOSHIBA PRODUCT GUIDE Discrete IGBTs

TOSHIBA PRODUCT GUIDE Discrete IGBTs

Product basic characteristics

1.1 Core Definition and Advantages

Product positioning: Toshiba discrete IGBT is a power semiconductor that integrates the advantages of MOSFET and bipolar transistor, used in inverters and power conversion circuits

Core Features:

High input impedance, supports voltage driving, simplifies driving circuit

Fast switching characteristics, low carrier injection and recombination losses

The high current region still maintains a low collector emitter saturation voltage (VCE (sat))

Built in optimized diode for specific applications

Multiple packaging options, suitable for different installation scenarios

Structural principle: Adopting a pnpn four layer planar structure, conductivity modulation during conduction is achieved through pnp transistors to reduce saturation voltage

1.2 Key parameter range

Parameter Type Value Range Typical Values

Breakdown voltage (VCES) 200V-1500V 600V/900V/1200V (mainstream)

Collector current (IC) DC 8A-50A, pulse 20A-200A DC 30A-50A, pulse 100A-120A

Saturation voltage (VCE (sat)) 1.45V-2.3V 1.7V-2.1V (@ IC=30-50A)

Switching speed (tf) 0.05 μ s-0.3 μ s 0.1 μ s-0.2 μ s (@ VGE=15V)

Junction temperature (Tj) 150 ℃ -175 ℃ 150 ℃ (conventional), 175 ℃ (high-end model)

Package types TSON-8, SOP-8, TO-220SIS, TO-220SM, TO-3P (N), TO-3P (LH), etc-

Product series and application scenarios

2.1 Four core application series

Series Name Core Characteristics Voltage/Current Range Typical Applications Representative Models

Universal inverter series hard switch, high rigidity, fast switch (fc up to 50kHz) 600V-1200V, IC 10A-50A Universal motor, inverter air conditioner, washing machine UPS GT30J121、GT50J102、GT25Q301

Soft switch series voltage/current resonance, low switching loss 600V-1500V, IC 15A-6A IH kitchen utensils, IH rice cookers, microwave ovens, multifunctional printers GT35MR21, GT50NR21, GT40T321

Flash series low gate drive voltage (2.5V-4.0V), ESD protection 400V, IC 130A-200A digital camera, DSLR camera GT8G151, GT10G131, GT5G133

Plasma display series high current conduction, low conduction loss 300V-600V, IC 200A plasma display panel (PDP) driver circuit GT30F124, GT45G127, GT30J124

2.2 Special advantages of soft switch series

Subdivision type: including 6.5 generation RC-IGBT (reverse conductive type), single-chip integrated freewheeling diode, no additional diode required, lower thermal resistance

Adaptation circuit: 100V-120V input adaptation voltage resonant circuit, 200V-240V input adaptation current resonant circuit

Key models: GT50MR21 (900V/50A), GT40QR21 (1200V/40A), with a junction temperature of 175 ℃, suitable for high temperature scenarios

2.3 Core Highlights of Flash Series

Gate driver: Supports low voltage driving from 2.5V to 4.0V, compatible with camera 3.3V/5V built-in power supply

Protection design: Built in Zener diode between gate and emitter, providing ESD surge protection

Packaging advantage: Adopting TSON-8/SOP-8 small packaging, suitable for compact space requirements of cameras

Technological iteration and trends

3.1 Technical characteristics of each generation

Key features of voltage level generation core improvement

300V-400V 4-7 generation trench gate structure, wafer optimization, fine process low VCE (sat), high current, low driving voltage

600V 3-6 generation carrier injection optimization, thin wafer high rigidity, fast switching, soft switching adaptation

900V-1500V 4-6.5 generation trench gate, RC structure with low switching loss, high junction temperature, suitable for resonant circuits

3.2 Key Technology Improvement Direction

Wafer process: using thinner wafers and finer geometric patterns to reduce conduction losses

Carrier control: Optimize carrier injection and lifetime control, balance switching speed and saturation voltage

Reliability improvement: Some models have increased their junction temperature to 175 ℃, expanding their high-temperature application scenarios

Loss optimization: Compared to traditional MOSFETs, power loss is significantly reduced in high-frequency (20kHz-50kHz) scenarios

Product Naming and Support

4.1 Model Naming Rules (Example: GT60M323)

GT: Toshiba discrete IGBT logo

60: Collector DC current (IC), unit A

M: Voltage level identification (M=900V, J=600V, Q=1200V, etc.)

3: Function series (3=Soft switch series)

23: Serial number, distinguishing specific feature versions

4.2 Support for discontinued products

Provide _final-phase and a list of obsolete products, including recommended alternative models (such as GT60M322 replacing GT60N321)

Alternative explanation: There may be differences in the characteristics of alternative models, and it needs to be confirmed that they are suitable for actual working conditions

4.3 Global Service Network

Overseas subsidiaries cover the United States, Brazil, Europe (Germany, France, etc.), Asia (Singapore, China, South Korea, etc.)

Service points in China: with offices in Beijing, Shanghai, Shenzhen, Chengdu and other locations, providing technical and sales support